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Every Block Covered: Noise and Signal-to-Noise Ratio (SNR) in a 26 GHz 5G Front-End

Figure 1: 5G band n258 front-end block diagram.

The 24.25 to 27.5 GHz frequency range is also known as the “wider 26 GHz band” or 5G band n258. The Australian Communications and Media Authority (ACMA) “recognized that the wider 26 GHz millimeter wave (mmWave) band was at the forefront of the delivery of mmWave 5G wireless broadband services globally.”2 Consequently, in April 2021, a major portion of that spectrum was auctioned off to operators, predominantly in the 25.1 to 27.5 GHz frequency range.2 The 24.25 to 24.7 GHz band was identified for indoor use and the 24.7 to 25.1 GHz band for indoor/outdoor use.2 For the purposes of the RF front end in this application note, our focus will be on this lower, 24.25 to 25.1 GHz portion of the Australian 5G frequency range.

Linearity – Cascaded P1dB and IP3 for a Simple Microwave Front-End

Linearity – Cascaded P1dB and IP3 for a Simple Microwave Front-End

When examining a device data sheet, linearity parameters P1dB and IP3 are straightforward and relatively easy to apply during the design process. Once several components are connected in series in a design, complex equations governing cascaded P1dB and IP3 must be utilized to determine the overall linearity performance of the system or subsystem. The equations utilized to compute P1dB and IP3 provide a means of achieving accurate results in the absence of expensive simulation software. Even though the effect of VSWR interactions between stages is not included when performing the calculations, the results are a good first order approximation of the cascaded performance of the system. The purpose of this application note is to review P1dB and IP3 in general, and to compute these parameters for a basic, three-component RF front end. Other application notes in this series will delve further into the cascading of P1dB and IP3 as the system includes additional nonlinear components such as those utilized in frequency conversion and the accompanying IF components.

Every Block Covered: Noise and Signal-to-Noise Ratio (SNR) in a Simple Microwave Front-End

Figure 1: Point-to-point microwave front end block diagram.

When a technical discussion turns to noise, especially with several cascaded components involved, the calculations and terminology should be straightforward, but often they become more cumbersome than necessary. Signal-to-noise ratio (SNR) is another parameter that should be routinely calculated by the designer but that still creates uncertainty. The purpose of this short applications note is to square-up noise, noise floor, bandwidth and signal-to-noise ratio (SNR) in general, and to compute these parameters for a basic, three-component RF front end. Other application notes in this series dive deeper into the cascading of noise figure (NF), P1dB and IP3.

Navigating Amplifier Thermal Analysis

Navigating Amplifier Thermal Analysis

Mini-Circuits has a longstanding legacy of fully specifying the thermal performance of our amplifiers, with or without a Mini-Circuits-supplied heatsink. Recently, it has become so commonplace for custom heatsinks to be utilized with Mini-Circuits power amplifiers that the power amplifier thermal characteristics are now expressed differently. Although the thermal resistance of the Mini-Circuits-supplied heatsink is no longer explicitly provided for newer models this is easily calculated from the specifications given for any model power amplifier. Basic calculations are all that is needed to arrive at any parameter of interest when analyzing thermal characteristics of any Mini-Circuits power amplifier.

Wideband Connectorized Amplifiers Support Over-The-Air (OTA) Transmitter & Receiver Testing for 5G FR2 Bands

Figure 1: Simplified diagram of a Total Radiated Power (TRP) test setup.

The advent of 5G networks has already begun ushering in a whole new generation of wireless devices and applications, and device manufacturers are racing to be the first to market. In order to meet the 5G standard for commercial wireless communication, device manufacturers need to develop powerful transmitters and receivers that operate in the millimeter wave range. This comes with a number of challenges, one of which is testing and qualification. Due to the wireless nature of these devices, manufacturers need to conduct testing in real-world conditions, which isn’t possible using the conventional approach of connecting devices under test (DUTs) to instruments with coaxial cables. Over-the-air (OTA) testing allows engineers to more realistically simulate real-world device performance in the lab environment.

Choosing an LNA for your Receiver Front End

Choosing an LNA for your Receiver Front End

A low-noise amplifier (LNA), which Mini-Circuits defines as any amplifier with a noise figure (NF) below 3 dB, should usually be used at the front end of an RF or microwave receiver chain for ideal performance. This single component has outsized effects on the rest of the signal chain, and that’s why choosing an LNA is such a critical decision. Mini-Circuits stands ready to help our customers through this process, so let’s take a look at what goes into it.

Wideband Connectorized Amplifiers for mmWave Over-The-Air (OTA) Transmitter & Receiver Testing

Figure 1: Simplified diagram of a total radiated power (TRP) test setup.

The advent of 5G networks has already begun ushering in a whole new generation of wireless devices and applications, and device manufacturers are racing to be the first market. In order to meet the 5G standard for commercial wireless communication, device manufacturers need to develop powerful transmitters and receivers that operate in the millimeter wave range, which comes with a number of challenges, one of which is testing and qualification. Due to the wireless nature of these devices, manufactures need to conduct testing in real-world conditions, which isn’t possible using the conventional approach of connecting devices under test (DUTs) to instruments with coaxial cables. Over-the-air (OTA) allows engineers to more realistically simulate real-world device performance in the lab environment.

Distributed RF Amplifier Designs for Ultra-Wideband Applications

Figure 2: Noise figure and gain circles on the source reflection plane.

Amplifiers are used in RF systems to boost the power level of a signal. Conventional RF amplifiers are designed using reactive elements to achieve matching to the characteristic impedance of a circuit within the specified operating frequency range for a given system. Reactively matched amplifiers allow designers to optimize performance parameters for a broad range of system requirements. Combined with techniques like balancing, using 90˚ hybrids and negative feedback, they can support bandwidths as wide as about 10:1.

MMIC Amplifiers with Shutdown and Bypass Features De-Mystified

Figure 1: Simplified schematic of an RF amplifier with shutdown functionality

Mini-Circuits’ TSS- and TSY-families of MMIC amplifiers feature a versatile combination of performance characteristics including high dynamic range and very low noise figure with wideband frequency coverage from VHF up to mmWave applications. These product families also include additional features of shutdown and bypass functionality. These features often lead to customer questions about the difference between bypass and shutdown, which products have which features, and the benefits of each. This article will explain how these features work, and provide an overview of some of the applications are where shutdown and bypass functions are most commonly used.

MMIC Technologies: Pseudomorphic High Electron Mobility Transistor (pHEMT)

Figure 2: GaAs primitive cell

Pseudomorphic High-Electron-Mobility-Transistor (pHEMT) is one technology Monolithic Microwave Integrated Circuit (MMIC) designers and fabs use to develop and manufacture microwave integrated circuits. pHEMT has gained popularity as a building block of many MMICs produced by electronics manufacturers like Mini-Circuits due to its superior wideband performance characteristics including low noise figure, high OIP3 and excellent reliability up to 40 GHz and beyond. pHEMT uses heterojunctions between semiconductors of different compositions and bandgaps to achieve outstanding high-frequency performance. This article delves into the physics of pHEMT operation, advantage, and reliability test results. A link to a summary of Mini-Circuits’ pHEMT products is also provided.

One last thing...

Aharon

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