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PHA-1H-DG+

High Dynamic Range MMIC Amplifier Die, 50 MHz to 6 GHz

FEATURES

• High IP3, 40.4 dBm typ. at 2.4 GHz
• Gain, 13.8 dB typ. at 2 GHz
• High Pout, P1dB 22 dBm typ. at 2 GHz
• Low noise figure, 2.2 dB @2 GHz
• No external matching components required

PRODUCT OVERVIEW

Product Overview PHA-1H-D+ (RoHS compliant) is an advanced wideband amplifier die fabricated using E-PHEMT technol- ogy and offers extremely high dynamic range over a broad frequency range and with low noise figure. In addition, the PHA-1H-D+ has good input and output return loss over a broad frequency range without the need for external matching components and has demonstrated excellent reliability. Feature Advantages Broad Band: 0.05 to 6.0 GHz Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX Extremely High IP3 Versus DC power Consumption 40.4 dBm typical at 2GHz The PHA-1H-D+ matches industry leading IP3 performance relative to device size and power consumption. The combination of the design and E-PHEMT Structure provides enhanced linearity over a broad frequency range as evidence in the IP3 being typically 20 dB above the P 1dB point. This feature makes this amplifier ideal for use in: Driver amplifiers for complex waveform up converter paths Drivers in linearized transmit systems Secondary amplifiers in ultra High Dynamic range receivers No External Matching Components Required Mini-Circuits’ PHA-1H-D+ provides good Input and Output Return Loss of 10-23 dB up to 4 GHz without the need for any external matching components Low Noise Figure: 2.6dB typ. up to 4 GHz 3.4dB typ. up to 6 GHz A unique feature of the PHA-1H-D+ which separates this design from all competitors is the low noise figure performance in combination with the high IP3 resulting in high dynamic range. Low Juction Temperature Tj=115°C at 85°C lead temperature and 135°C at 105°C lead temperature Results in excellent reliability*

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