Product Overview LEE-9+ (RoHS compliant) is wideband current driven amplifier fabricated using HBT technology. In addi- tion, the LEE-9+, has good input and output return loss over a broad frequency range without the need for external matching components. Lead finish is SnAgNi. It has repeatable performance from lot to lot and is enclosed in a 3mm x 3mm x 0.89mm MCLP package for very good thermal performance. Feature Advantages Broadband, DC* to 8 GHz (* Low frequency cut off determined by external coupling capacitors) A single amplifier covering DC* to C band. Reduced component inventory Ideal for wideband applications such as instrumentation and military Low gain: 8.5 dB typ. at 0.1 GHz and 7.7 dB at 8 GHz Ideal for increasing the gain of amplifier chain by low value. Typically small gain change may need two components; an amplifier and an attenutaor. Use of LEE-9+ reduces component count. Outstanding Gain Flatness: ±0.4 dB No need for gain flatness compensation over 8 GHz band to realize published gain flatness. Wideband matched Input return loss: 17-29 dB typ. Output return loss: 12-34 dB typ. No external matching required to realize published return loss. MCLP Package Low inductance, repeatable transitions, excellent thermal pad.
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