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HSW2-272VHDR+

High-Power MMIC SPDT Reflective Switch, +81 dBm IIP3, 30 to 2700 MHz

PRODUCT DESCRIPTION

Product Overview Mini-Circuits’ HSWA2-63DR+ is a MMIC SPDT absorptive switch with an internal driver designed for wideband operation from 100 MHz to 6.0 GHz supporting many applications requiring high performance across a wide frequency range. This model provides excellent isolation, fast switching speed and high linearity in a tiny 4x4mm 20-Lead MCLP package. Produced using a unique CMOS process on silicon, it offers the performance of GaAs with the advantages of conventional CMOS devices. HSWA2-63DR+ provides a high level of ESD protection and excellent repeatability.

PRODUCT FEATURES

High power handling, 32W @850• High Power
45 dBm (32W) at 850 MHz, 44 dBm (25W) at 2 GHz – Pulsed
• High IIP3
85 dBm at 850 MHz, 81 dBm at 2.7 GHz
• Low Insertion Loss
0.25 dB at 850 MHz, 0.4 dB at 2 GHz
• Low current consumption, 120 µA typ.
• Immune to latch up MHz – Pulsed • High IIP3, +81 dBm • Immune to latch up
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