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RFE-3G33G7100X+

Connectorized SMA-N, High Power Amplifier, 3200 MHz to 3700 MHz, 50Ω

RFE-3G33G7100X+

FEATURES

• High output power, 100 W
• 3.2 to 3.7 GHz
• Suitable for CW and pulsed signals
• High gain, 53 dB typical
• Rugged and robust
• Built-in output circulator
• Built-in monitoring and protection for temperature and current
• Survives full reflection at any phase with full output power

PRODUCT OVERVIEW

The RFE-3G33G7100X+ is a Class AB, GaN high-power amplifier providing greater than 100 W saturated power over the 3200 to 3700 MHz band, ideal for a variety of high-power test setups as well as applications including communications, radar and more. This ruggedly designed GaN amplifier provides unconditional stability and built-in self-protection against reverse polarity, over/under voltage, over-temperature, and being overdriven. The amplifier’s output stage is further protected in the event of a fault condition, allowing high-power operation into a full reflection at any phase angle (refer to the maximum input power specifications). Housed in a rugged aluminum alloy case measuring 6.0 x 9.1 x 1.2”, the unit features an input SMA female connector and a Type N female output.

PRODUCT VIDEO

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