The GNA-63-5W+ is a GaN-on-SiC HEMT MMIC high power amplifier operating from 10 MHz to 6 GHz. Offering flat gain and high-efficiency, this power amplifier is designed for demanding RF applications requiring high output power, excellent linearity, and a compact footprint. When driven with an input power level of +26 dBm, the amplifier provides a typical 12 dB of flat power gain across a broad frequency range, delivers more than 6 W of output power and achieves 35% power-added efficiency. At 3 GHz, IM3 is -32 dBc and IM5 is -56 dBc with a POUT of +26 dBm/tone. This excellent linearity preserves signal integrity, making the amplifier ideal for high-fidelity communication systems. The device operates from a +28 V supply and consumes 400 mA of quiescent current. Potential applications include radar, electronic warfare, and satellite communication systems. The GNA-63-5W+ is matched to 50Ω at the input and output, making it easy to implement. It comes in a 5×5 mm, 32-lead QFN-Style surface-mount package, ensuring excellent thermal performance and compatibility with high-volume manufacturing.